PART |
Description |
Maker |
TISPPBL3 TISPPBL3D TISPPBL3D-S TISPPBL3DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) 双远期导电的P -门晶闸管爱立信微电子用户线接口电路电路(SLIC
|
Bourns Inc. Bourns, Inc.
|
TISPPBL2P TISPPBL2D TISPPBL1P TISPPBL1D |
TELECOM, SURGE PROTECTION CIRCUIT, PDIP8 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
|
BOURNS INC BOURNS[Bourns Electronic Solutions]
|
TISP6NTP2A TISP6NTP2A08 |
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
|
Bourns Electronic Solutions
|
TISP5080H3BJ TISP5110H3BJ TISP5070H3BJ TISP5150H3B |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS 前瞻性导电单向晶闸管过电压保护器
|
Power Innovations International, Inc. POINN[Power Innovations Limited] POINN[Power Innovations Ltd]
|
5SHX14H4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX10H6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
ACS21MS 5962F9862901V9A 5962F9862901VCC 5962F98629 |
AC SERIES, DUAL 4-INPUT AND GATE, UUC14 Radiation Hardened Dual 4-Input AND Gate AC SERIES, DUAL 4-INPUT AND GATE, CDIP14 Quadruple Bus Buffer Gate With 3-State Outputs 14-SOIC 0 to 70
|
Intersil, Corp. Intersil Corporation
|
FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应 HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
|